課程名稱 |
半導體元件物理 Physics of Semiconductor Devices |
開課學期 |
108-1 |
授課對象 |
學程 奈米科技學程 |
授課教師 |
張子璿 |
課號 |
EE5113 |
課程識別碼 |
921 U7110 |
班次 |
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學分 |
3.0 |
全/半年 |
半年 |
必/選修 |
選修 |
上課時間 |
星期五2,3,4(9:10~12:10) |
上課地點 |
電二106 |
備註 |
總人數上限:40人 |
Ceiba 課程網頁 |
http://ceiba.ntu.edu.tw/1081EE5113_ |
課程簡介影片 |
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核心能力關聯 |
本課程尚未建立核心能力關連 |
課程大綱
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為確保您我的權利,請尊重智慧財產權及不得非法影印
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課程概述 |
We cover the fundamental physical principles that govern the device operation and the application. Emphasis is placed on understanding background of the individual device operation. First part of the class will cover topics include basic carrier transports in semiconductors, including conduction electrons, and holes; charge and heat transport; carrier trapping and recombination. Latter part of the class will cover novel device physics focusing MOSFET, ballistic transport, electron tunneling, single electron transistors, spin-electronics, and quantum electronics. |
課程目標 |
Prepare the student to be able to understand, explore, and design the novel electron devices.
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課程要求 |
Basic course of Semiconductor devices
Solid State Electronics (suggested) |
預期每週課後學習時數 |
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Office Hours |
備註: Wed 1:00pm ~ 3:00pm |
指定閱讀 |
1. Physics of Semiconductor Devices, ISBN-13: 978-0471143239 (Required) |
參考書目 |
1. Modern Semiconductor Devices for Integrated Circuits, Chenming Calvin Hu, 2010
2. Fundamentals of Modern VLSI Devices 2nd Edition, Yuan Taur, ISBN-13: 978-1107635715 |
評量方式 (僅供參考) |
No. |
項目 |
百分比 |
說明 |
1. |
Attendance |
5% |
Extra 0.5 point per attendance. Maximum 100 in final scores. |
2. |
Final |
30% |
Score will be 120/100. You can average the score with midterm if you exceed 100. |
3. |
Midterm |
30% |
Score will be 120/100. You can average the score with the final exam if you exceed 100. |
4. |
Homework |
20% |
No late submission allowed
Test will be open book, no electronics allowed. |
5. |
Simulation |
10% |
A simulation project using TCAD |
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週次 |
日期 |
單元主題 |
第1週 |
9/13 |
沒課/想要加簽的同學請禮拜四 9/12 ~5:00pm 到明達館 517 登記 |
第2週 |
9/20 |
Physics and Properties of Semiconductors: Chapter 1/Sze
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第3週 |
9/27 |
Solid State Electronics II
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第4週 |
10/4 |
Charge Carrier Transport |
第5週 |
10/5 |
BTE
|
第6週 |
10/11 |
No class |
第7週 |
10/18 |
P-N Junctions: Chapter 2/Sze
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第8週 |
10/25 |
Metal-Semiconductor Contacts: Chapter 3/Sze
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第9週 |
11/1 |
Metal-Insulator-Semiconductor Capacitors: Chapter 4/Sze |
第10週 |
11/8 |
Midterm/範圍 Sze Chapter 1-3 & BTE note
Open book, only calculator allowed
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第11週 |
11/15 |
School Anniversary.no class |
第12週 |
11/22 |
Metal Insulator Semiconductor Capacitor 4/Sze (Of course you have class) |
第13週 |
11/29 |
BJT/HBT SZE Chapter 5
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第14週 |
12/6 |
MOSFETs Sze/Chapter 6 |
第15週 |
12/13 6:00pm |
MOSFET Oxide Interface |
第16週 |
12/20 |
FinFeT/ModFET |
第17週 |
12/27 |
MODFET/High Electron Mobility Transistors |
第18週 |
1/3 |
Final exam. Open book. |
第19週 |
1/10 |
MOSFET: Small signal model / Quantum & Spin Electronics |
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